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                    BAS45AL All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 5 — 6 August 2010 3 of 11 NXP Semiconductors BAS45AL Low-leakage diode 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics [1] When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA. Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-t) thermal resistance from junction to tie-point - - 300 K/W Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 375 K/W Table 7. Characteristics Tj =25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 1 mA - - 780 mV IF = 10 mA - - 860 mV IF = 100 mA - - 1000 mV IR reverse current Emax =100lx VR = 125 V - - 1 nA VR =30V; Tj = 125 °C - - 300 nA VR = 125 V; Tj =125°C - - 500 nA VR = 125 V; Tj =150°C--2μA Cd diode capacitance VR =0V; f=1MHz --4pF trr reverse recovery time [1] -1.5-μs |